OGAWA Kenta, a second-year master's student in the Department of Electrical Engineering, Graduate School of Science and Technology (Semiconductor Nanotechnology Laboratory, supervised by Professor Atsushi Ogura), has been awarded the Young Researcher Award at The 2025 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (IWDTF2025).
IWDTF is an annual international workshop organized by the Japan Society of Applied Physics. This year, it was held from November 5–7 at the Sendai City War Reconstruction Memorial Hall, attracting approximately 120–130 participants from Japan and abroad. Ogawa’s award was selected from 59 presented papers.
Title: “Effects of Interface Formation Process on Tunneling Current Components of N-type Ti0.3Zn0.7O1.3/P-type Si Stack Structure”
Authors: Kenta Ogawa, Toyohiro Chikyow, Atsushi Ogura, and Takahiro Nagata. The research focuses on foundational studies for the realization of next-generation high-performance semiconductor logic devices.
This work was conducted as part of a collaborative research project between the university and the National Institute for Materials Science under the Joint Graduate School Program. Professor NAGATA Takahiro serves as a Visiting Professor at the university.
